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Current Electricity – Class 12 Physics Chapter 3 Notes & NCERT PDF

Class 12PhysicsChapter 3NCERT book: Physics Part I - Class 12

Notes and a simple summary of Chapter 3 of the NCERT Class 12 Physics book, with the official chapter PDF, flashcards, an MCQ quiz and an AI tutor for your doubts.

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Chapter 3: Current Electricity

Introduction

Chapter 3 moves from charges at rest to charges in motion. It explains what electric current is, how Ohm's law arises from the drift of electrons, how resistivity depends on material and temperature, how cells supply energy, and how to analyse circuits with Kirchhoff's rules and the Wheatstone bridge.

Key Concepts

3.2–3.3 Electric current

Current is the rate of flow of charge: I = ΔQ/Δt (for steady current I = q/t). SI unit ampere (A). By convention, current flows in the direction of positive-charge motion — opposite to electron flow in metals. Without a field, free electrons move randomly with no net flow; an applied field produces a net drift.

3.4 Ohm's law

V = IR, where R is the resistance (unit ohm, Ω). R = ρl/A: resistance grows with length and falls with cross-sectional area. ρ is the resistivity (Ω m), a material property. Current density j = I/A, and in vector form E = ρj (or j = σE, σ = 1/ρ = conductivity).

3.5 Drift of electrons — the origin of resistivity

In a field E, each electron accelerates (a = −eE/m) between collisions. Averaging over the relaxation time τ gives the drift velocity v_d = −eEτ/m. Then I = neAv_d, which leads to ρ = m/(ne²τ) — Ohm's law from microscopic physics.

  • Mobility μ = |v_d|/E = eτ/m (m² V⁻¹ s⁻¹).
  • 3.6 Limitations of Ohm's law

    Ohm's law is not universal: some devices have non-linear V–I graphs, current may depend on the sign of V (diodes), or V may not be a single-valued function of I (e.g. GaAs). These are non-ohmic devices.

    3.7–3.8 Resistivity and temperature

    Materials range from conductors (ρ ~ 10⁻⁸ Ω m) through semiconductors to insulators (ρ up to 10¹⁴–10¹⁶ Ω m). For metals, ρ_T = ρ₀[1 + α(T − T₀)] with a positive temperature coefficient α. Nichrome has high ρ and a small α (useful in heaters), manganin and constantan have very small α (standard resistors), and semiconductors have ρ decreasing with temperature (negative α).

    3.9 Electrical energy and power

    Power dissipated: P = VI = I²R = V²/R. Power transmission uses high voltage so that current, and hence line loss I²R_c, is small.

    3.10–3.11 Cells, emf and internal resistance

    The emf ε is the potential difference between the terminals of a cell on open circuit. With internal resistance r and external resistance R: I = ε/(R + r), and terminal voltage V = ε − Ir.

  • Series cells: ε_eq = ε₁ + ε₂, r_eq = r₁ + r₂.
  • Parallel cells: ε_eq = (ε₁r₂ + ε₂r₁)/(r₁ + r₂), 1/r_eq = 1/r₁ + 1/r₂.
  • 3.12 Kirchhoff's rules

  • Junction rule (charge conservation): the sum of currents entering a junction equals the sum leaving.
  • Loop rule (energy conservation): the algebraic sum of potential changes around any closed loop is zero.
  • 3.13 Wheatstone bridge

    Four resistances R₁, R₂, R₃, R₄ with a galvanometer across the middle. The bridge is balanced (no galvanometer current) when R₂/R₁ = R₄/R₃. This lets an unknown resistance be found accurately from three known ones.

    Resistor combinations

  • Series: R = R₁ + R₂ + …; same current.
  • Parallel: 1/R = 1/R₁ + 1/R₂ + …; same voltage.
  • Worked Examples

  • Example 3.1 (drift speed): copper, A = 1.0 × 10⁻⁷ m², I = 1.5 A, density 9.0 × 10³ kg m⁻³, atomic mass 63.5 g. n = (9.0 × 10³/0.0635) × 6.0 × 10²³ ≈ 8.5 × 10²⁸ m⁻³. v_d = I/(neA) ≈ 1.1 × 10⁻³ m s⁻¹ — about 1 mm per second. The current still starts almost instantly because the field is set up at nearly the speed of light.
  • Example 3.3 (heater): a nichrome toaster element has R = 75.3 Ω at 27.0 °C and draws 2.68 A at 230 V, so R = 230/2.68 ≈ 85.8 Ω. With α = 1.70 × 10⁻⁴ °C⁻¹: 85.8 = 75.3[1 + α(T − 27)] → T ≈ 847 °C.
  • Example 3.4 (platinum thermometer): R = 5 Ω at 0 °C, 5.23 Ω at 100 °C, 5.795 Ω in the bath. t = 100 × (5.795 − 5)/(5.23 − 5) ≈ 345.65 °C.
  • Example 3.5 (cube network): twelve 1 Ω resistors on a cube, 10 V across opposite corners. By symmetry R_eq = 5/6 Ω, so the battery current is 10/(5/6) = 12 A.
  • Internal resistance: a 12 V cell with r = 1 Ω drives a 5 Ω resistor: I = 12/(5 + 1) = 2 A; terminal voltage = 12 − 2 × 1 = 10 V.
  • Formula / Key-Facts Sheet

  • I = q/t; j = I/A; V = IR; R = ρl/A
  • v_d = eEτ/m; I = neAv_d; ρ = m/(ne²τ); μ = eτ/m
  • ρ_T = ρ₀[1 + α(T − T₀)]
  • P = VI = I²R = V²/R
  • I = ε/(R + r); V = ε − Ir
  • Series R = ΣRᵢ; parallel 1/R = Σ1/Rᵢ
  • Wheatstone balance: R₂/R₁ = R₄/R₃
  • Board Exam Focus

  • Numericals: drift speed, temperature dependence of resistance, internal resistance and terminal voltage, cell combinations, Kirchhoff network problems, Wheatstone bridge.
  • Derivations: relation I = neAv_d and ρ = m/(ne²τ); equivalent emf of cells in series/parallel; Wheatstone bridge balance condition using Kirchhoff's rules.
  • Answer outline — I = neAv_d: in time Δt, charges within length v_dΔt cross area A → charge = neAv_dΔt → I = ΔQ/Δt = neAv_d.
  • Answer outline — balance condition: with I_g = 0, apply the loop rule to the two loops containing the galvanometer → I₁R₁ = I₂R₃ and I₁R₂ = I₂R₄ → divide to get R₂/R₁ = R₄/R₃.
  • Conceptual: why drift speed is tiny yet current is instant; why transmission uses high voltage; limitations of Ohm's law.
  • Key Terms

    Electric current (विद्युत धारा), Current density (धारा घनत्व), Resistance (प्रतिरोध), Resistivity (प्रतिरोधकता), Conductivity (चालकता), Drift velocity (अपवाह वेग), Relaxation time (विश्रांति काल), Mobility (गतिशीलता), Temperature coefficient (ताप गुणांक), Electromotive force (विद्युत वाहक बल), Internal resistance (आंतरिक प्रतिरोध), Terminal voltage (टर्मिनल विभवांतर), Kirchhoff's rules (किरखोफ के नियम), Wheatstone bridge (व्हीटस्टोन सेतु), Power (शक्ति)

    Common Mistakes

  • Confusing emf with terminal voltage (they are equal only when no current flows).
  • Wrong signs in Kirchhoff's loop rule — fix a direction for each current and keep to it.
  • Thinking the drift velocity is the speed at which the current "signal" travels.
  • Using ρ as if it depended on the wire's length or area (it depends only on material and temperature).
  • Treating a semiconductor like a metal when temperature rises.
  • 💡 Key Learning Points

    • ✓Current, current density and Ohm's law (V = IR, R = ρl/A)
    • ✓Drift velocity, relaxation time, mobility and the microscopic origin of resistivity
    • ✓Temperature dependence of resistivity and limitations of Ohm's law
    • ✓EMF, internal resistance, terminal voltage and combinations of cells
    • ✓Kirchhoff's rules and the Wheatstone bridge

    👨‍🏫 Teaching Tips

    • →Show a real V–I graph for a resistor and a diode to contrast ohmic and non-ohmic behaviour
    • →Use a crowd-in-a-corridor analogy for drift with collisions
    • →Work Example 3.1 to show why drift speed is tiny
    • →Measure a cell's terminal voltage with and without load to introduce internal resistance
    • →Teach a fixed sign convention for Kirchhoff's loop rule and practise on two-loop circuits
    • →Derive the Wheatstone balance condition directly from Kirchhoff's rules
    • →Link P = I²R to why transmission lines use high voltage

    📋 Assessment Questions

    1. Can students derive I = neAv_d and ρ = m/(ne²τ)?
    2. Can they compute terminal voltage and currents with internal resistance?
    3. Can they apply Kirchhoff's rules to a two-loop network?
    4. Can they derive and use the Wheatstone bridge condition?
    5. Can they explain how resistivity varies with temperature for metals and semiconductors?

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